Справочник MOSFET. BLF7G27L-90P

 

BLF7G27L-90P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF7G27L-90P
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: SOT1121A
     - подбор MOSFET транзистора по параметрам

 

BLF7G27L-90P Datasheet (PDF)

 ..1. Size:972K  nxp
blf7g27l-90p blf7g27ls-90p.pdfpdf_icon

BLF7G27L-90P

BLF7G27L-90P; BLF7G27LS-90PPower LDMOS transistorRev. 2 10 November 2011 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 5.1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdfpdf_icon

BLF7G27L-90P

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 5.2. Size:289K  philips
blf7g27l-75p blf7g27ls-75p.pdfpdf_icon

BLF7G27L-90P

BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

 5.3. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdfpdf_icon

BLF7G27L-90P

BLF7G27L-150P; BLF7G27LS-150PPower LDMOS transistorRev. 1 12 November 2010 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: APT60M75L2LL | BSC032N03SG | HM4828 | BF964S | ALD1103PBL | BSS119L6327 | BL23N50-K

 

 
Back to Top

 


 
.