Справочник MOSFET. BLF7G27LS-75P

 

BLF7G27LS-75P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF7G27LS-75P
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
   Тип корпуса: SOT1121B
     - подбор MOSFET транзистора по параметрам

 

BLF7G27LS-75P Datasheet (PDF)

 ..1. Size:289K  philips
blf7g27l-75p blf7g27ls-75p.pdfpdf_icon

BLF7G27LS-75P

BLF7G27L-75P; BLF7G27LS-75PPower LDMOS transistorRev. 2 14 July 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f IDq

 4.1. Size:165K  philips
blf7g27l-100 blf7g27ls-100.pdfpdf_icon

BLF7G27LS-75P

BLF7G27L-100; BLF7G27LS-100Power LDMOS transistorRev. 2 5 April 2011 Preliminary data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 4.2. Size:972K  nxp
blf7g27l-90p blf7g27ls-90p.pdfpdf_icon

BLF7G27LS-75P

BLF7G27L-90P; BLF7G27LS-90PPower LDMOS transistorRev. 2 10 November 2011 Product data sheet1. Product profile1.1 General description90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

 6.1. Size:304K  philips
blf7g27l-150p 7g27ls-150p.pdfpdf_icon

BLF7G27LS-75P

BLF7G27L-150P; BLF7G27LS-150PPower LDMOS transistorRev. 1 12 November 2010 Product data sheet1. Product profile1.1 General description150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSM3J304T | AP2306CGN-HF | SML801R4BN | TSM9966DCX6 | NP88N075KUE | IXTT75N10 | HGA058N08SL

 

 
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