Справочник MOSFET. BLF878

 

BLF878 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BLF878
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 42 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 39 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: SOT979A
     - подбор MOSFET транзистора по параметрам

 

BLF878 Datasheet (PDF)

 ..1. Size:148K  nxp
blf878.pdfpdf_icon

BLF878

BLF878UHF power LDMOS transistorRev. 02 15 June 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 300 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes it

 9.1. Size:134K  philips
blf871.pdfpdf_icon

BLF878

BLF871UHF power LDMOS transistorRev. 01 18 December 2008 Objective data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 100 W broadband from HF to 1 GHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransm

 9.2. Size:587K  philips
blf871 blf871s.pdfpdf_icon

BLF878

BLF871; BLF871SUHF power LDMOS transistorRev. 04 19 November 2009 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digita

 9.3. Size:152K  philips
blf872 1.pdfpdf_icon

BLF878

BLF872UHF power LDMOS transistorRev. 01 20 February 2006 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 250 W broadband over the full UHF band from470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thisdevice makes

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: MTDN3018S6R | 3N190 | SIR472ADP | 2N4338 | SI1402DH | SM4375NSKP | APM4542K

 

 
Back to Top

 


 
.