BLF878 - описание и поиск аналогов

 

BLF878. Аналоги и основные параметры

Наименование производителя: BLF878

Тип транзистора: LDMOS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 42 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm

Тип корпуса: SOT979A

Аналог (замена) для BLF878

- подборⓘ MOSFET транзистора по параметрам

 

BLF878 даташит

 ..1. Size:148K  nxp
blf878.pdfpdf_icon

BLF878

BLF878 UHF power LDMOS transistor Rev. 02 15 June 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it

 9.1. Size:134K  philips
blf871.pdfpdf_icon

BLF878

BLF871 UHF power LDMOS transistor Rev. 01 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transm

 9.2. Size:587K  philips
blf871 blf871s.pdfpdf_icon

BLF878

BLF871; BLF871S UHF power LDMOS transistor Rev. 04 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digita

 9.3. Size:152K  philips
blf872 1.pdfpdf_icon

BLF878

BLF872 UHF power LDMOS transistor Rev. 01 20 February 2006 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes

Другие MOSFET... BLF7G27LS-140 , BLF7G27LS-150P , BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , AO4407A , BLF879P , BLF881 , BLF881S , BLF884P , BLF884PS , BLF888 , BLF888A , BLF888AS .

 

 

 

 

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