BLF881 - описание и поиск аналогов

 

BLF881. Аналоги и основные параметры

Наименование производителя: BLF881

Тип транзистора: LDMOS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 140 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm

Тип корпуса: SOT467C

Аналог (замена) для BLF881

- подборⓘ MOSFET транзистора по параметрам

 

BLF881 даташит

 ..1. Size:193K  philips
blf881 blf881s.pdfpdf_icon

BLF881

BLF881; BLF881S UHF power LDMOS transistor Rev. 3 7 December 2010 Product data sheet 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmit

 9.1. Size:164K  philips
blf888.pdfpdf_icon

BLF881

BLF888 UHF power LDMOS transistor Rev. 5 21 January 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent

 9.2. Size:519K  nxp
blf888a blf888as.pdfpdf_icon

BLF881

BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performanc

 9.3. Size:416K  nxp
blf884p blf884ps.pdfpdf_icon

BLF881

BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performan

Другие MOSFET... BLF7G27LS-200PB , BLF7G27LS-75P , BLF7G27LS-90P , BLF861A , BLF871 , BLF871S , BLF878 , BLF879P , IRFP064N , BLF881S , BLF884P , BLF884PS , BLF888 , BLF888A , BLF888AS , BLF888B , BLF888BS .

 

 

 

 

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