2SJ238 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SJ238
Маркировка: Z6
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 75 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.68 Ohm
Тип корпуса: SC62
2SJ238 Datasheet (PDF)
2sj238.pdf
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2sj239.pdf
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2sj232.pdf
Ordering number:EN3817P-Channel Silicon MOSFET2SJ232Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ232]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO
2sj230.pdf
Ordering number:EN3815P-Channel Silicon MOSFET2SJ230Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ230]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO
2sj231.pdf
Ordering number:EN3816P-Channel Silicon MOSFET2SJ231Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SJ231]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum R
2sj233.pdf
Ordering number:EN3818P-Channel Silicon MOSFET2SJ233Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ233]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO
2sj234s-l.pdf
2SJ234(L), 2SJ234(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for DC-DC converter, motor drive, power switch, solenoid driveOutlineDPAK-144123123D1. Gate G2. Drain 3.
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918