Справочник MOSFET. BLS6G2933P-200

 

BLS6G2933P-200 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLS6G2933P-200
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 32 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 66 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: SOM038

 Аналог (замена) для BLS6G2933P-200

 

 

BLS6G2933P-200 Datasheet (PDF)

 ..1. Size:100K  nxp
 bls6g2933p-200.pdf

BLS6G2933P-200 BLS6G2933P-200

BLS6G2933P-200LDMOS S-Band radar pallet amplifierRev. 01 28 May 2010 Objective data sheet1. Product profile1.1 General description200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL(1dB) Gp D IDq(GHz)

 5.1. Size:135K  philips
 bls6g2933s-130.pdf

BLS6G2933P-200 BLS6G2933P-200

BLS6G2933S-130LDMOS S-band radar power transistorRev. 03 3 March 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mode o

 8.1. Size:70K  philips
 bls6g2731-6g.pdf

BLS6G2933P-200 BLS6G2933P-200

BLS6G2731-6GLDMOS S-Band radar power transistorRev. 01 19 February 2009 Product data sheet1. Product profile1.1 General description6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-ABproduction test circuit.Mode of

 8.2. Size:74K  nxp
 bls6g2731-120 6g2731s-120.pdf

BLS6G2933P-200 BLS6G2933P-200

BLS6G2731-120;BLS6G2731S-120LDMOS S-band radar power transistorRev. 01 14 November 2008 Product data sheet1. Product profile1.1 General description120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHzrange.Table 1. Typical performanceTypical RF performance at Tcase =25 C; tp = 100 s; = 10 %; IDq = 100 mA; in a class-ABproduction te

 8.3. Size:134K  nxp
 bls6g2731s-130.pdf

BLS6G2933P-200 BLS6G2933P-200

BLS6G2731S-130LDMOS S-band radar power transistorRev. 2 18 November 2010 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.Table 1. Typical performanceTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.Mod

 8.4. Size:681K  nxp
 bls6g2735l-30 bls6g2735ls-30.pdf

BLS6G2933P-200 BLS6G2933P-200

BLS6G2735L-30; BLS6G2735LS-30S-band LDMOS transistorRev. 3 24 September 2012 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.Table 1. Application informationTypical RF performance at Tcase =25C; tp = 300 s; = 10 %; IDq = 50 mA.Test signal f VDS PL

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