BSH207 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSH207
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.417 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.52 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
Тип корпуса: TSOP6
BSH207 Datasheet (PDF)
bsh207 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH207 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -1.52 Ag Subminiature surface mountpackage RDS(ON) 0.15 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT457P-channel, enh
bsh202 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH202 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.52 Ag Subminiature surface mountpackage RDS(ON) 0.9 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPT
bsh201 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH201 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Low threshold voltage VDS = -60 V Fast switching Logic level compatible ID = -0.3 Ag Subminiature surface mountpackage RDS(ON) 2.5 (VGS = -10 V)dGENERAL DESCRIPTION PINNING SOT23P-channel, enhancement mode, PIN DESCRIPTI
bsh205 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH205 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 Ag Subminiature surface mountpackage RDS(ON) 0.5 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT23P-channel, enhan
bsh203 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH203 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -30 V Fast switching Logic level compatible ID = -0.47 Ag Subminiature surface mountpackage RDS(ON) 1.1 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT23P-channel, enhan
bsh206 3.pdf
Philips Semiconductors Product specification P-channel enhancement mode BSH206 MOS transistorFEATURES SYMBOL QUICK REFERENCE DATAs Very low threshold voltage VDS = -12 V Fast switching Logic level compatible ID = -0.75 Ag Subminiature surface mountpackage RDS(ON) 0.5 (VGS = -2.5 V)VGS(TO) 0.4 VdGENERAL DESCRIPTION PINNING SOT363P-channel, enha
bsh201.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsh205g2.pdf
BSH205G220 V, P-channel Trench MOSFET29 April 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power di
bsh202.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsh203.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918