BSP250 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSP250
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 25 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
Тип корпуса: SC73
BSP250 Datasheet (PDF)
bsp250.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP250P-channel enhancement modevertical D-MOS transistor1997 Jun 20Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modeBSP250vertical D-MOS transistorFEATURES PINNING - SOT223 High-speed switchingPIN SYMBOL DESCRIPTIO
bsp250.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsp255.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP255P-channel enhancement modevertical D-MOS transistor1996 Aug 05Product specificationSupersedes data of 1996 Jun 13File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel enhancement modeBSP255vertical D-MOS transistorFEATURES PINNING - SOT223 Direct interface to C-MOS, TTL etcPIN SYMBOL
bsp254 bsp254a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP254; BSP254AP-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP254; BSP254AD-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER CONDIT
bsp254a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP254; BSP254AP-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBSP254; BSP254AD-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER CONDIT
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918