DISCRETE SEMICONDUCTORSDATA SHEETBSS83MOSFET N-channel enhancementswitching transistorApril 1991Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationMOSFET N-channel enhancement switching transistor BSS83DESCRIPTION Marking code:Symmetrical insulated-gate silicon BSS83 = M74MOS field-effect transistor of theN-channel

BSS83MOSFET N-channel enhancement switching transistorRev. 03 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links

BSS 83 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 2 Avalanche ratedContinuous drain current ID -0.33 A Logic Level3 dv/dt rated21VPS05161Type Package Tape and Reel Marking Pin 1 PIN 2 PIN 3BSS 83 P PG-SOT-23 L6327: 3000pcs/r. G S DYAsMaximum Ratin

Preliminary dataBSS 83 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 2 Avalanche ratedContinuous drain current ID -0.33 A Logic Level3 dv/dt rated21VPS05161Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3BSS 83 P SOT-23 Q67041-S1416 YAs G S DMaxi