Справочник MOSFET. BSS84AKW

 

BSS84AKW Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BSS84AKW
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.26 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.15 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7.5 Ohm
   Тип корпуса: SC70
 

 Аналог (замена) для BSS84AKW

   - подбор ⓘ MOSFET транзистора по параметрам

 

BSS84AKW Datasheet (PDF)

 ..1. Size:1421K  nxp
bss84akw.pdfpdf_icon

BSS84AKW

BSS84AKW50 V, 150 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switchin

 7.1. Size:1030K  nxp
bss84akmb.pdfpdf_icon

BSS84AKW

BSS84AKMB50 V, single P-channel Trench MOSFETRev. 1 6 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ElectroStatic Di

 7.2. Size:1426K  nxp
bss84akv.pdfpdf_icon

BSS84AKW

BSS84AKV50 V, 170 mA dual P-channel Trench MOSFETRev. 1 19 May 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to

 7.3. Size:1420K  nxp
bss84ak.pdfpdf_icon

BSS84AKW

BSS84AK50 V, 180 mA P-channel Trench MOSFETRev. 1 23 May 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

Другие MOSFET... BSS138PW , BSS192 , BSS83 , BSS84AK , BSS84AKM , BSS84AKS , BSS84AKT , BSS84AKV , IRF730 , BSS87 , BST82 , BUK6207-55C , BUK6209-30C , BUK6210-55C , BUK6211-75C , BUK6212-40C , BUK6213-30A .

History: BUK7M12-60E | IXTP15N50L2 | 2SK3132 | 2SK3505-01MR | 2SK3355-ZJ | JCS4N65MF | IXTP3N80

 

 
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