DISCRETE SEMICONDUCTORSDATA SHEETBSS87N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSS87D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel vertical D-MOS transistorDrain-source voltage VDS max. 200 Vin

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BSS87N-channel enhancement modevertical D-MOS transistorProduct specification 2001 May 18Supersedes data of 1997 June 23Philips Semiconductors Product specificationN-channel enhancement modeBSS87vertical D-MOS transistorFEATURES PINNING - SOT89 Direct interface to C-MOS, TTL, etc.PIN DESCRIPTION High-spe

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BSS 87SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSS 87 240 V 0.29 A 6 SOT-89 KAType Ordering Code Tape and Reel InformationBSS 87 Q67000-S506 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 240 VVDrain-gate v

SMD Type MOSFETN-Channel MOSFETBSS87 (KSS87)1.70 0.1 Features VDS (V) = 200V ID = 0.28 A (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 6 (VGS = 10V) High-speed switchingd No secondary breakdown.1.Gate2.Draing3.Sources Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Gate-Source Voltage