BSS87 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET BSS87 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSS87 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel vertical D-MOS transistor Drain-source voltage VDS max. 200 V in

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS87 N-channel enhancement mode vertical D-MOS transistor Product specification 2001 May 18 Supersedes data of 1997 June 23 Philips Semiconductors Product specification N-channel enhancement mode BSS87 vertical D-MOS transistor FEATURES PINNING - SOT89 Direct interface to C-MOS, TTL, etc. PIN DESCRIPTION High-spe

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BSS 87 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSS 87 240 V 0.29 A 6 SOT-89 KA Type Ordering Code Tape and Reel Information BSS 87 Q67000-S506 E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 240 V V Drain-gate v

SMD Type MOSFET N-Channel MOSFET BSS87 (KSS87) 1.70 0.1 Features VDS (V) = 200V ID = 0.28 A (VGS = 10V) 0.42 0.1 0.46 0.1 RDS(ON) 6 (VGS = 10V) High-speed switching d No secondary breakdown. 1.Gate 2.Drain g 3.Source s Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage