Справочник MOSFET. BUK6218-40C

 

BUK6218-40C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK6218-40C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 22 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для BUK6218-40C

 

 

BUK6218-40C Datasheet (PDF)

 ..1. Size:364K  philips
buk6218-40c.pdf

BUK6218-40C
BUK6218-40C

BUK6218-40CN-channel TrenchMOS intermediate level FETRev. 1 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical a

 8.1. Size:180K  philips
buk6212-40c.pdf

BUK6218-40C
BUK6218-40C

BUK6212-40CN-channel TrenchMOS intermediate level FETRev. 2 21 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica

 8.2. Size:357K  philips
buk6210-55c.pdf

BUK6218-40C
BUK6218-40C

BUK6210-55CN-channel TrenchMOS intermediate level FETRev. 2 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high pe

 8.3. Size:171K  philips
buk6213-30c.pdf

BUK6218-40C
BUK6218-40C

BUK6213-30CN-channel TrenchMOS intermediate level FETRev. 01 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 8.4. Size:201K  philips
buk6217-55c.pdf

BUK6218-40C
BUK6218-40C

BUK6217-55CN-channel TrenchMOS intermediate level FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 8.5. Size:211K  philips
buk6211-75c.pdf

BUK6218-40C
BUK6218-40C

BUK6211-75CN-channel TrenchMOS FETRev. 02 28 September 2010 Product data sheet1. Product profile1.1 General descriptionStandard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performan

 8.6. Size:218K  philips
buk6215-75c.pdf

BUK6218-40C
BUK6218-40C

BUK6215-75CN-channel TrenchMOS FETRev. 02 4 October 2010 Product data sheet1. Product profile1.1 General descriptionLogic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance

 8.7. Size:695K  nxp
buk6213-30a.pdf

BUK6218-40C
BUK6218-40C

BUK6213-30AN-channel TrenchMOS intermediate level FETRev. 03 2 February 2011 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicatio

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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