BUK652R6-40C - аналоги, параметры транзистора

BUK652R6-40C даташит

..1. Size:349K philips
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BUK652R6-40C N-channel TrenchMOS FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

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buk652r7-30c.pdf pdf_icon

BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

7.2. Size:375K philips
buk652r3-40c.pdf pdf_icon

BUK652R3-40C N-channel TrenchMOS intermediate level FET Rev. 2 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

7.3. Size:183K philips
buk652r0-30c.pdf pdf_icon

BUK652R0-30C N-channel TrenchMOS intermediate level FET Rev. 01 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig