Справочник MOSFET. BUK653R5-55C

 

BUK653R5-55C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK653R5-55C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 263 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 16 V

Пороговое напряжение включения Ugs(th): 2.8 V

Максимально допустимый постоянный ток стока (Id): 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 191 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0039 Ohm

Тип корпуса: TO220AB

Аналог (замена) для BUK653R5-55C

 

 

BUK653R5-55C Datasheet (PDF)

1.1. buk653r5-55c.pdf Size:364K _philips

BUK653R5-55C
BUK653R5-55C

BUK653R5-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 27 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

3.1. buk653r2-55c.pdf Size:182K _philips

BUK653R5-55C
BUK653R5-55C

BUK653R2-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

3.2. buk653r7-30c.pdf Size:368K _philips

BUK653R5-55C
BUK653R5-55C

BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

Другие MOSFET... BUK6510-75C , BUK652R0-30C , BUK652R1-30C , BUK652R3-40C , BUK652R6-40C , BUK653R2-55C , BUK653R3-30C , BUK653R4-40C , 2N7000 , BUK653R7-30C , BUK654R0-75C , BUK654R6-55C , BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , BUK6610-75C .

 

 
Back to Top