BUK6610-75C - описание и поиск аналогов

 

BUK6610-75C. Аналоги и основные параметры

Наименование производителя: BUK6610-75C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 158 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK6610-75C

- подборⓘ MOSFET транзистора по параметрам

 

BUK6610-75C даташит

 ..1. Size:198K  philips
 buk6610-75c.pdf pdf_icon

BUK6610-75C

BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 ..2. Size:767K  nxp
 buk6610-75c.pdf pdf_icon

BUK6610-75C

BUK6610-75C N-channel TrenchMOS FET Rev. 02 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance autom

 8.1. Size:371K  philips
 buk661r9-40c.pdf pdf_icon

BUK6610-75C

BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 8.2. Size:395K  philips
 buk661r8-30c.pdf pdf_icon

BUK6610-75C

BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 02 28 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK653R5-55C , BUK653R7-30C , BUK654R0-75C , BUK654R6-55C , BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , IRFB4227 , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C .

History: LNG7N60D | IXFH26N50P | IPA60R199CP

 

 

 

 

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