BUK661R8-30C - описание и поиск аналогов

 

BUK661R8-30C. Аналоги и основные параметры

Наименование производителя: BUK661R8-30C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 263 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0019 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK661R8-30C

- подборⓘ MOSFET транзистора по параметрам

 

BUK661R8-30C даташит

 ..1. Size:395K  philips
 buk661r8-30c.pdf pdf_icon

BUK661R8-30C

BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 02 28 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 ..2. Size:750K  nxp
 buk661r8-30c.pdf pdf_icon

BUK661R8-30C

BUK661R8-30C N-channel TrenchMOS intermediate level FET Rev. 2.1 18 August 2011 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.1. Size:371K  philips
 buk661r9-40c.pdf pdf_icon

BUK661R8-30C

BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 7.2. Size:943K  nxp
 buk661r9-40c.pdf pdf_icon

BUK661R8-30C

BUK661R9-40C N-channel TrenchMOS intermediate level FET Rev. 1 18 August 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK654R0-75C , BUK654R6-55C , BUK654R8-40C , BUK655R0-75C , BUK6607-55C , BUK6607-75C , BUK6610-75C , BUK661R6-30C , 10N60 , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C .

History: LNG7N60D | IXFH26N50P | IXFH20N100P | IPA60R199CP

 

 

 

 

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