Справочник MOSFET. BUK663R5-30C

 

BUK663R5-30C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK663R5-30C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 158 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK663R5-30C

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK663R5-30C Datasheet (PDF)

 ..1. Size:201K  philips
 buk663r5-30c.pdf pdf_icon

BUK663R5-30C

BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 ..2. Size:769K  nxp
 buk663r5-30c.pdf pdf_icon

BUK663R5-30C

BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 5.1. Size:219K  philips
 buk663r5-55c.pdf pdf_icon

BUK663R5-30C

BUK663R5-55CN-channel TrenchMOS intermediate level FETRev. 2 23 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.1. Size:360K  philips
 buk663r7-75c.pdf pdf_icon

BUK663R5-30C

BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... BUK6610-75C , BUK661R6-30C , BUK661R8-30C , BUK661R9-40C , BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , STP75NF75 , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C .

History: MEM2310M3 | AP9960GM-HF | STL60P4LLF6 | AFN5004S

 

 
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