Справочник MOSFET. BUK663R7-75C

 

BUK663R7-75C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK663R7-75C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 306 W

Предельно допустимое напряжение сток-исток (Uds): 75 V

Предельно допустимое напряжение затвор-исток (Ugs): 16 V

Пороговое напряжение включения Ugs(th): 2.8 V

Максимально допустимый постоянный ток стока (Id): 120 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 234 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.004 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK663R7-75C

 

 

BUK663R7-75C Datasheet (PDF)

1.1. buk663r7-75c.pdf Size:360K _philips

BUK663R7-75C
BUK663R7-75C

BUK663R7-75C N-channel TrenchMOS FET Rev. 2 — 15 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

3.1. buk663r5-55c.pdf Size:219K _philips

BUK663R7-75C
BUK663R7-75C

BUK663R5-55C N-channel TrenchMOS intermediate level FET Rev. 2 — 23 December 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

3.2. buk663r5-30c.pdf Size:201K _philips

BUK663R7-75C
BUK663R7-75C

BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 3.3. buk663r2-40c.pdf Size:374K _philips

BUK663R7-75C
BUK663R7-75C

BUK663R2-40C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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