Справочник MOSFET. BUK663R7-75C

 

BUK663R7-75C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK663R7-75C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 234 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: D2PAK
     - подбор MOSFET транзистора по параметрам

 

BUK663R7-75C Datasheet (PDF)

 ..1. Size:360K  philips
 buk663r7-75c.pdf pdf_icon

BUK663R7-75C

BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

 ..2. Size:932K  nxp
 buk663r7-75c.pdf pdf_icon

BUK663R7-75C

BUK663R7-75CN-channel TrenchMOS FETRev. 2 15 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance aut

 7.1. Size:201K  philips
 buk663r5-30c.pdf pdf_icon

BUK663R7-75C

BUK663R5-30CN-channel TrenchMOS intermediate level FETRev. 02 16 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 7.2. Size:219K  philips
 buk663r5-55c.pdf pdf_icon

BUK663R7-75C

BUK663R5-55CN-channel TrenchMOS intermediate level FETRev. 2 23 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

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