Справочник MOSFET. BUK664R4-55C

 

BUK664R4-55C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK664R4-55C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 204 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 124 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0049 Ohm
   Тип корпуса: D2PAK
     - подбор MOSFET транзистора по параметрам

 

BUK664R4-55C Datasheet (PDF)

 ..1. Size:216K  philips
 buk664r4-55c.pdf pdf_icon

BUK664R4-55C

BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat

 ..2. Size:772K  nxp
 buk664r4-55c.pdf pdf_icon

BUK664R4-55C

BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat

 7.1. Size:927K  nxp
 buk664r6-40c.pdf pdf_icon

BUK664R4-55C

BUK664R6-40CN-channel TrenchMOS intermediate level FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.1. Size:180K  philips
 buk662r7-55c.pdf pdf_icon

BUK664R4-55C

BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

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