Справочник MOSFET. BUK664R6-40C

 

BUK664R6-40C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK664R6-40C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 158 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK664R6-40C

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK664R6-40C Datasheet (PDF)

 ..1. Size:927K  nxp
 buk664r6-40c.pdf pdf_icon

BUK664R6-40C

BUK664R6-40CN-channel TrenchMOS intermediate level FETRev. 2 17 November 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 7.1. Size:216K  philips
 buk664r4-55c.pdf pdf_icon

BUK664R6-40C

BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat

 7.2. Size:772K  nxp
 buk664r4-55c.pdf pdf_icon

BUK664R6-40C

BUK664R4-55CN-channel TrenchMOS intermediate level FETRev. 03 21 December 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applicat

 9.1. Size:180K  philips
 buk662r7-55c.pdf pdf_icon

BUK664R6-40C

BUK662R7-55CN-channel TrenchMOS intermediate level FETRev. 01 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

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Другие MOSFET... BUK662R4-40C , BUK662R5-30C , BUK662R7-55C , BUK663R2-40C , BUK663R5-30C , BUK663R5-55C , BUK663R7-75C , BUK664R4-55C , 2N7000 , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , BUK6E4R0-75C , BUK7105-40AIE .

History: GSM1304E | NCEAP60ND30AG | AP95T10AGI-HF | AP9585GJ | 2SK3205 | 2SK373 | NCEP01T13B

 

 
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