Справочник MOSFET. BUK6E4R0-75C

 

BUK6E4R0-75C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK6E4R0-75C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 306 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 234 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0042 Ohm
   Тип корпуса: I2PAK
 

 Аналог (замена) для BUK6E4R0-75C

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK6E4R0-75C Datasheet (PDF)

 9.1. Size:350K  philips
 buk6e3r4-40c.pdf pdf_icon

BUK6E4R0-75C

BUK6E3R4-40CN-channel TrenchMOS intermediate level FETRev. 3 14 October 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high

 9.2. Size:373K  philips
 buk6e2r3-40c.pdf pdf_icon

BUK6E4R0-75C

BUK6E2R3-40CN-channel TrenchMOS intermediate level FETRev. 1 18 August 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high p

 9.3. Size:181K  philips
 buk6e2r0-30c.pdf pdf_icon

BUK6E4R0-75C

BUK6E2R0-30CN-channel TrenchMOS intermediate level FETRev. 02 7 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

 9.4. Size:181K  philips
 buk6e3r2-55c.pdf pdf_icon

BUK6E4R0-75C

BUK6E3R2-55CN-channel TrenchMOS intermediate level FETRev. 01 6 September 2010 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in hig

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Другие MOSFET... BUK664R4-55C , BUK664R6-40C , BUK664R8-75C , BUK6C1R5-40C , BUK6E2R0-30C , BUK6E2R3-40C , BUK6E3R2-55C , BUK6E3R4-40C , AO3400 , BUK7105-40AIE , BUK7105-40ATE , BUK7107-40ATC , BUK7107-55AIE , BUK7107-55ATE , BUK7108-40AIE , BUK7109-75AIE , BUK7109-75ATE .

 

 
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