BUK7212-55B - Даташиты. Аналоги. Основные параметры

BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications

BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

BUK7219-55ATrenchMOS standard level FETRev. 01 02 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications

BUK7215-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7219-55AN-channel TrenchMOS standard level FETRev. 02 3 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u

BUK72150-55AN-channel TrenchMOS standard level FETRev. 03 26 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.