BUK7212-55B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK7212-55B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 167 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 185 °C
Общий заряд затвора (Qg): 35 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: DPAK
Аналог (замена) для BUK7212-55B
BUK7212-55B Datasheet (PDF)
buk7213-40a.pdf
BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications
buk7210-55b.pdf
BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in
buk7219-55a 01.pdf
BUK7219-55ATrenchMOS standard level FETRev. 01 02 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan
buk7213 40a.pdf
BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications
buk7215-55a.pdf
BUK7215-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
buk7219-55a.pdf
BUK7219-55AN-channel TrenchMOS standard level FETRev. 02 3 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
buk7210-55b.pdf
BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u
buk72150-55a.pdf
BUK72150-55AN-channel TrenchMOS standard level FETRev. 03 26 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.
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