BUK7226-75A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK7226-75A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 158 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 48 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
Тип корпуса: DPAK
Аналог (замена) для BUK7226-75A
BUK7226-75A Datasheet (PDF)
buk7226-75a.pdf
BUK7226-75AN-channel TrenchMOS standard level FETRev. 02 22 February 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in
buk7226-75a 01.pdf
BUK7226-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan
buk7227-100b.pdf
BUK7227-100BN-channel TrenchMOS standard level FETRev. 02 17 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1
buk7222-55a.pdf
BUK7222-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
buk7225-55a.pdf
BUK7225-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
Другие MOSFET... BUK7210-55B , BUK7212-55B , BUK7214-75B , BUK72150-55A , BUK7215-55A , BUK7219-55A , BUK7222-55A , BUK7225-55A , HY1906P , BUK7227-100B , BUK7230-55A , BUK7237-55A , BUK7240-100A , BUK724R5-30C , BUK725R0-40C , BUK7275-100A , BUK7277-55A .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918