BUK7275-100ATrenchMOS standard level FETRev. 01 25 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7275-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated St

BUK7275-100AN-channel TrenchMOS standard level FETRev. 02 17 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

BUK7277-55AN-channel TrenchMOS standard level FET12 June 2014 Product data sheet1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 co

BUK725R0-40CN-channel TrenchMOS standard level FETRev. 01 23 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance au

BUK7226-75AN-channel TrenchMOS standard level FETRev. 02 22 February 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications

BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

BUK7219-55ATrenchMOS standard level FETRev. 01 02 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7219-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

BUK7240-100ATrenchMOS standard level FETRev. 01 03 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7240-100A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated St

BUK7230-55ATrenchMOS standard level FETRev. 01 29 September 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7230-55A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated St

BUK7226-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK7226-75A in SOT428 (D-PAK).2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

BUK7213-40ATrenchMOS standard level FETRev. 01 29 January 2004 Product dataM3D3001. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible1.3 Applications

BUK7215-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7227-100BN-channel TrenchMOS standard level FETRev. 02 17 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

BUK7219-55AN-channel TrenchMOS standard level FETRev. 02 3 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7237-55AN-channel TrenchMOS standard level FETRev. 02 9 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

BUK7240-100AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

BUK7210-55BN-channel TrenchMOS standard level FETRev. 01 11 December 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u

BUK7222-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7225-55AN-channel TrenchMOS standard level FETRev. 2 23 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7230-55AN-channel TrenchMOS standard level FETRev. 02 16 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 F

BUK7208-40BN-channel TrenchMOS standard level FETRev. 03 7 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

BUK72150-55AN-channel TrenchMOS standard level FETRev. 03 26 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.