Справочник MOSFET. BUK7511-55A

 

BUK7511-55A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK7511-55A

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 166 W

Предельно допустимое напряжение сток-исток (Uds): 55 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 75 A

Максимальная температура канала (Tj): 175 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm

Тип корпуса: TO220AB

Аналог (замена) для BUK7511-55A

 

 

BUK7511-55A Datasheet (PDF)

4.1. buk7514-60e.pdf Size:207K _update_mosfet

BUK7511-55A
BUK7511-55A

BUK7514-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repet

4.2. buk751r6-30e.pdf Size:211K _update_mosfet

BUK7511-55A
BUK7511-55A

BUK751R6-30E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

 4.3. buk751r8-40e.pdf Size:211K _update_mosfet

BUK7511-55A
BUK7511-55A

BUK751R8-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

4.4. buk7510-30 1.pdf Size:50K _philips

BUK7511-55A
BUK7511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7510-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 75 A features very low on-state resistanc

 4.5. buk7518-55 2.pdf Size:52K _philips

BUK7511-55A
BUK7511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7518-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 57 A features very low on-state resistanc

4.6. buk75150-55a buk76150-55a.pdf Size:299K _philips

BUK7511-55A
BUK7511-55A

BUK75/76150-55A TrenchMOS standard level FET Rev. 02 25 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive (GPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible. 1.3 Applications Aut

4.7. buk7515-100a.pdf Size:218K _philips

BUK7511-55A
BUK7511-55A

BUK7515-100A N-channel TrenchMOS standard level FET Rev. 3 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featur

4.8. buk7516-55a buk7616-55a.pdf Size:306K _philips

BUK7511-55A
BUK7511-55A

BUK7516-55A; BUK7616-55A TrenchMOS standard level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

4.9. buk7510-55al.pdf Size:210K _philips

BUK7511-55A
BUK7511-55A

BUK7510-55AL N-channel TrenchMOS standard level FET Rev. 03 4 August 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu

4.10. buk75150 buk76150 55a-01.pdf Size:302K _philips

BUK7511-55A
BUK7511-55A

BUK75150-55A; BUK76150-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK75150-55A in SOT78 (TO-220AB) BUK76150-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technolo

4.11. buk7518-30 1.pdf Size:48K _philips

BUK7511-55A
BUK7511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7518-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 55 A features very low on-state resistanc

4.12. buk7514-55a buk7614-55a.pdf Size:68K _philips

BUK7511-55A
BUK7511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55A Standard level FET BUK7614-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 73 A Using trench technology w

4.13. buk7514-55 2.pdf Size:52K _philips

BUK7511-55A
BUK7511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 68 A features very low on-state resistanc

4.14. buk7515-100a 1.pdf Size:50K _philips

BUK7511-55A
BUK7511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7515-100A Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 100 V trench technology which features ID Drain current (DC) 75 A very low on-state resistance.

4.15. buk7514-30 1.pdf Size:50K _philips

BUK7511-55A
BUK7511-55A

Philips Semiconductors Product specification TrenchMOS? transistor BUK7514-30 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 30 V trench technology. The device ID Drain current (DC) 69 A features very low on-state resistanc

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