BUK7526-100B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK7526-100B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 157 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 49 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 38 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.026 Ohm
Тип корпуса: TO220AB
Аналог (замена) для BUK7526-100B
BUK7526-100B Datasheet (PDF)
buk7526-100b buk7626-100b.pdf
BUK75/7626-100BTrenchMOS standard level FETRev. 01 11 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7526-100B in SOT78 (TO-220AB)BUK7626-100B in SOT404 (D2-PAK).1.2 Features Very low on
buk7524-55a buk7524-55a buk7624-55a.pdf
BUK7524-55A; BUK7624-55ATrenchMOS standard level FETRev. 02 01 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7524-55A in SOT78 (TO-220AB)BUK7624-55A in SOT404 (D2-PAK).2. Features TrenchMOS techno
buk7528-55a buk7628-55a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55A Standard level FET BUK7628-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 41 AUsing trench tec
buk752r3-40c.pdf
BUK752R3-40CN-channel TrenchMOS standard level FETRev. 03 26 January 2009 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance
buk7528 buk7628-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-100A Standard level FET BUK7628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 47 AUsing trench
buk7524 buk7624 55a-01.pdf
BUK7524-55A; BUK7624-55ATrenchMOS standard level FETRev. 01 25 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7524-55A in SOT78 (TO-220AB)BUK7624-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec
buk7520-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7520-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 52 Afeatures very low on-state
buk7524-55 3.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7524-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 45 Afeatures very low on-state
buk7523-75a buk7623-75a.pdf
BUK7523-75A; BUK7623-75ATrenchMOS standard level FETRev. 01 09 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7523-75A in SOT78 (TO-220AB)BUK7623-75A in SOT404 (D 2-PAK).2. Features TrenchMOS tec
buk7528-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7528-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 40 Afeatures very low on-state
buk7520-100a buk7620-100a.pdf
BUK7520-100A;BUK7620-100ATrenchMOS standard level FETRev. 01 5 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7520-100A in SOT78 (TO-220AB)BUK7620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS
buk752r7-60e.pdf
BUK752R7-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
buk752r3-40e.pdf
BUK752R3-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
