Справочник MOSFET. BUK7526-100B

 

BUK7526-100B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK7526-100B

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 157 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 49 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 38 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.026 Ohm

Тип корпуса: TO220AB

Аналог (замена) для BUK7526-100B

 

 

BUK7526-100B Datasheet (PDF)

1.1. buk7526-100b buk7626-100b.pdf Size:294K _philips

BUK7526-100B
BUK7526-100B

BUK75/7626-100B TrenchMOS standard level FET Rev. 01 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state re

4.1. buk752r3-40e.pdf Size:212K _update_mosfet

BUK7526-100B
BUK7526-100B

BUK752R3-40E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

4.2. buk752r7-60e.pdf Size:211K _update_mosfet

BUK7526-100B
BUK7526-100B

BUK752R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repe

 4.3. buk7524-55a.pdf Size:314K _update_mosfet

BUK7526-100B
BUK7526-100B

BUK7524-55A; BUK7624-55A TrenchMOS™ standard level FET Rev. 02 — 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ techno

4.4. buk7524-55 3.pdf Size:52K _philips

BUK7526-100B
BUK7526-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7524-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 45 A features very low on-state resistanc

 4.5. buk7524-55a buk7624-55a.pdf Size:314K _philips

BUK7526-100B
BUK7526-100B

BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 02 01 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101

4.6. buk7520-100a buk7620-100a.pdf Size:315K _philips

BUK7526-100B
BUK7526-100B

BUK7520-100A; BUK7620-100A TrenchMOS standard level FET Rev. 01 5 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7520-100A in SOT78 (TO-220AB) BUK7620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technolog

4.7. buk7524 buk7624 55a-01.pdf Size:313K _philips

BUK7526-100B
BUK7526-100B

BUK7524-55A; BUK7624-55A TrenchMOS standard level FET Rev. 01 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7524-55A in SOT78 (TO-220AB) BUK7624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

4.8. buk7523-75a buk7623-75a.pdf Size:310K _philips

BUK7526-100B
BUK7526-100B

BUK7523-75A; BUK7623-75A TrenchMOS standard level FET Rev. 01 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK7523-75A in SOT78 (TO-220AB) BUK7623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q

4.9. buk7528-55.pdf Size:52K _philips

BUK7526-100B
BUK7526-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 40 A features very low on-state resistanc

4.10. buk7528-55a buk7628-55a.pdf Size:96K _philips

BUK7526-100B
BUK7526-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-55A Standard level FET BUK7628-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 41 A Using trench technology w

4.11. buk7520-55 2.pdf Size:52K _philips

BUK7526-100B
BUK7526-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7520-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 52 A features very low on-state resistanc

4.12. buk752r3-40c.pdf Size:222K _philips

BUK7526-100B
BUK7526-100B

BUK752R3-40C N-channel TrenchMOS standard level FET Rev. 03 26 January 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance autom

4.13. buk7528 buk7628-100a.pdf Size:80K _philips

BUK7526-100B
BUK7526-100B

Philips Semiconductors Product specification TrenchMOS? transistor BUK7528-100A Standard level FET BUK7628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V available in TO220AB and SOT404 . ID Drain current (DC) 47 A Using trench technolog

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