BUK75/7607-30BTrenchMOS standard level FETRev. 01 07 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7507-30B in SOT78 (TO-220AB)BUK7607-30B in SOT404 (D2-PAK).1.2 Features Very low on-st

BUK75/7607-55BTrenchMOS standard level FETRev. 01 15 May 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7507-55B in SOT78 (TO-220AB)BUK7607-55B in SOT404 (D2-PAK).1.2 Features Very low on-stat

BUK7607-55BN-channel TrenchMOS standard level FETRev. 2 26 July 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10

Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the dev

BUK7509-75A; BUK7609-75ATrenchMOS standard level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-75A in SOT78 (TO-220AB)BUK7609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS te

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec

BUK75/7606-75BTrenchMOS standard level FETRev. 02 20 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK7506-75B in SOT78 (TO-220AB)BUK7606-75B in SOT404 (D2-PAK).1.2 Features Very low on-stat

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the dev

BUK75/7609-55ATrenchMOS standard level FETRev. 01 6 August 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-55A in SOT78 (TO-220AB)BUK7609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the devi

Philips Semiconductors Product specification TrenchMOS transistor BUK7606-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi

Philips Semiconductors Product specification TrenchMOS transistor BUK7605-30A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the dev

BUK7509-75A; BUK7609-75ATrenchMOS standard level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-75A in SOT78 (TO-220AB)BUK7609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS te

BUK7606-55AN-channel TrenchMOS standard level FETRev. 03 1 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7608-40BN-channel TrenchMOS standard level FETRev. 04 24 September 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

BUK7606-75BN-channel TrenchMOS standard level FETRev. 03 3 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7606-55BN-channel TrenchMOS standard level FETRev. 02 21 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

BUK7608-55AN-channel TrenchMOS standard level FETRev. 03 14 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe