BUK763R4-30B. Аналоги и основные параметры

Наименование производителя: BUK763R4-30B

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 255 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK763R4-30B

- подборⓘ MOSFET транзистора по параметрам

 

BUK763R4-30B даташит

 ..1. Size:108K  philips
buk753r4-30b buk763r4-30b.pdfpdf_icon

BUK763R4-30B

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

 ..2. Size:826K  nxp
buk763r4-30b.pdfpdf_icon

BUK763R4-30B

BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 2 21 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 F

 3.1. Size:104K  philips
buk763r4-30.pdfpdf_icon

BUK763R4-30B

BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa

 7.1. Size:323K  philips
buk753r1-40b buk763r1-40b.pdfpdf_icon

BUK763R4-30B

BUK75/763R1-40B TrenchMOS standard level FET Rev. 02 16 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability BUK753R1-40B in SOT78 (TO-220AB) BUK763R1-40B in SOT404 (D2-PAK). 1.2 Features Very low on-sta

Другие IGBT... BUK7626-100B, BUK7628-100A, BUK7628-55A, BUK762R0-40C, BUK762R7-30B, BUK7635-100A, BUK7635-55A, BUK763R1-40B, IRF4905, BUK763R6-40C, BUK7640-100A, BUK764R0-55B, BUK764R0-75C, BUK764R3-40B, BUK765R2-40B, BUK7660-100A, BUK7675-100A