BUK763R6-40C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK763R6-40C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 203 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: D2PAK
- подбор MOSFET транзистора по параметрам
BUK763R6-40C Datasheet (PDF)
buk763r6-40c.pdf

BUK763R6-40CN-channel TrenchMOS standard level FETRev. 04 16 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance aut
buk763r4-30.pdf

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa
buk753r1-40b buk763r1-40b.pdf

BUK75/763R1-40BTrenchMOS standard level FETRev. 02 16 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK753R1-40B in SOT78 (TO-220AB)BUK763R1-40B in SOT404 (D2-PAK).1.2 Features Very low on-sta
buk753r4-30b buk763r4-30b.pdf

BUK753R4-30B; BUK763R4-30BN-channel TrenchMOS standard level FETRev. 01 5 January 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compa
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SVG062R8NL5 | CEB6186 | SVS65R280DD4TR | SVGP20110NSTR | SVG108R5NAT | SWSI4N70D1 | BUK7675-55A
History: SVG062R8NL5 | CEB6186 | SVS65R280DD4TR | SVGP20110NSTR | SVG108R5NAT | SWSI4N70D1 | BUK7675-55A



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