Справочник MOSFET. BUK7660-100A

 

BUK7660-100A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK7660-100A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 106 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: D2PAK
 

 Аналог (замена) для BUK7660-100A

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK7660-100A Datasheet (PDF)

 ..1. Size:764K  nxp
buk7660-100a.pdfpdf_icon

BUK7660-100A

BUK7660-100AN-channel TrenchMOS standard level FETRev. 02 7 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.

 8.1. Size:204K  nxp
buk766r0-60e.pdfpdf_icon

BUK7660-100A

BUK766R0-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetiti

 9.1. Size:314K  philips
buk7524-55a buk7524-55a buk7624-55a.pdfpdf_icon

BUK7660-100A

BUK7524-55A; BUK7624-55ATrenchMOS standard level FETRev. 02 01 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7524-55A in SOT78 (TO-220AB)BUK7624-55A in SOT404 (D2-PAK).2. Features TrenchMOS techno

 9.2. Size:55K  philips
buk7615-100a 1.pdfpdf_icon

BUK7660-100A

Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the d

Другие MOSFET... BUK763R1-40B , BUK763R4-30B , BUK763R6-40C , BUK7640-100A , BUK764R0-55B , BUK764R0-75C , BUK764R3-40B , BUK765R2-40B , IRF9540N , BUK7675-100A , BUK7675-55A , BUK78150-55A , BUK7880-55A , BUK7905-40AI , BUK7905-40AIE , BUK7905-40ATE , BUK7907-40ATC .

History: AP9410AGH | 2SJ229 | AP2328GN-HF | JCS4N70F | BL3N90-D | IXTP14N60P | STF6N95K5

 

 
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