BUK794R1-40BT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK794R1-40BT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 272 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 83 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
Тип корпуса: TO2205
Аналог (замена) для BUK794R1-40BT
BUK794R1-40BT Datasheet (PDF)
buk714r1-40bt buk794r1-40bt.pdf
BUK71/794R1-40BTTrenchMOS standard level FETRev. 01 4 November 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology. The devicesinclude TrenchPLUS diodes for over-temperature protection.Product availability:BUK714R1-40BT in SO
buk7109-75ate buk7909-75ate.pdf
BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE
buk7907-55ate.pdf
BUK7907-55ATETrenchPLUS standard level FETRev. 02 16 July 2002 Product dataM3D7451. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance, and TrenchPLUSdiodes for Electrostatic Discharge (ESD) and temperature sensing.Product availability:BUK7907-55ATE in SOT263B.2. Fe
buk7105-40aie buk7905-40aie.pdf
BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c
buk7107-40atc buk7907-40atc.pdf
BUK71/7907-40ATCTrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUSdiodes for clamping, (ESD) protection and temperature sensing.Product availability:BUK7107-40ATC in SOT42
buk7109-75aie buk7909-75aie.pdf
BUK71/7909-75AIETrenchPLUS standard level FETRev. 01 9 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7109-75AIE in SOT426 (D2-PAK)BUK7
buk7905 40ai-01.pdf
BUK7905-40AITrenchPLUS standard level FETRev. 01 9 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and TrenchPLUScurrent sensing.1.2 Features Integrated current sensor Standard level compatible.1.3 Applications Va
buk7105-40ate buk7905-40ate.pdf
BUK71/7905-40ATETrenchPLUS standard level FETRev. 01 20 August 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring both very low on-state resistance andTrenchPLUS diodes for temperature sensing and ESD protection.Product availability:BUK7105-40ATE in SOT426 (
buk7107-55aie buk7907-55aie.pdf
BUK71/7907-55AIETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.Product availability:BUK7107-55AIE in SOT426 (D2-PAK)BUK
buk7108-40aie buk7908-40aie.pdf
BUK71/7908-40AIETrenchPLUS standard level FETRev. 02 24 October 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c
buk7908-40aie.pdf
BUK7908-40AIEN-channel TrenchPLUS standard level FETRev. 03 17 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has b
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
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