BUK794R1-40BT Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK794R1-40BT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 272 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 83 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
Тип корпуса: TO2205
- подбор MOSFET транзистора по параметрам
BUK794R1-40BT Datasheet (PDF)
buk714r1-40bt buk794r1-40bt.pdf

BUK71/794R1-40BTTrenchMOS standard level FETRev. 01 4 November 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology. The devicesinclude TrenchPLUS diodes for over-temperature protection.Product availability:BUK714R1-40BT in SO
buk7109-75ate buk7909-75ate.pdf

BUK71/7909-75ATETrenchPLUS standard level FETRev. 01 12 August 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance and a TrenchPLUSdiode for temperature sensing.Product availability:BUK7109-75ATE in SOT426 (D2-PAK)BUK7909-75ATE
buk7907-55ate.pdf

BUK7907-55ATETrenchPLUS standard level FETRev. 02 16 July 2002 Product dataM3D7451. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on state resistance, and TrenchPLUSdiodes for Electrostatic Discharge (ESD) and temperature sensing.Product availability:BUK7907-55ATE in SOT263B.2. Fe
buk7105-40aie buk7905-40aie.pdf

BUK71/7905-40AIETrenchPLUS standard level FETRev. 04 6 February 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance, TrenchPLUScurrent sensing and diodes for ESD protection.1.2 Features ESD protection Q101 compliant Integrated c
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: UTC50N06L
History: UTC50N06L



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