Скачать даташит для apt1001rbn:

D TO-247 G APT1001RBN 1000V 11.0A 1.00 S APT5030BN 500V 21.0A 0.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 1001RBN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 11 Amps IDM Pulsed Drain Current 1 44 VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25 C 310 Watts PD Linear Derating Factor 2.48 W/ C TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL Lead Temperature 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT APT1001RBN 1000 Drain-Source Breakdown Voltage BVDSS Volts (VGS = 0V, ID = 250 A) On State Drain Current 2 APT1001RBN 11 ID(ON) Amps (VDS > ID(ON)