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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBT8050 PIN CONFIGURATION (NPN) 1 = BASE SOT-23 2 = EMITTER 3 = COLLECTOR 3 Formed SMD Package 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 25 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 800 mA Collector Dissipation @ Ta=25 C PC 250 mW Operating And Storage Junction Tj, Tstg - 55 to +125 C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Base Voltage VCBO IC=100 A, IE=0 30 V Collector Emitter Voltage VCEO IC=10mA, IB=0 25 V VEBO Emitter Base Voltage IE=10 A, IC=0 6 V Collector Cut Off Current ICBO VCB=15V, IE=0 50 nA Emitter

 

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 cmbt8050.pdf Проектирование, MOSFET, Мощность

 cmbt8050.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cmbt8050.pdf База данных, Инновации, ИМС, Транзисторы

 

 

 


 
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