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CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 125m @VGS = -10V. RDS(ON) = 175m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -13 A Drain Current-Pulsed a IDM -52 A Maximum Power Dissipation @ TC = 25 C 42 W PD - Derate above 25 C 0.29 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 3.5 C/W Thermal Resistance, Junction-to-Ambient