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CED20P10/CEU20P10 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -16A, RDS(ON) = 130m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -16 A Drain Current-Pulsed a IDM -64 A Maximum Power Dissipation @ TC = 25 C 75 W PD - Derate above 25 C 0.5 W/ C EAS Single Pulsed Avalanche Energy e 128 mJ Single Pulsed Avalanche Current e IAS 16 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistan