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CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D(1,2,5,6,) Lead free product is acquired. TSOP-6 package. 4 5 6 G(3) 3 2 1 S(4) TSOP-6 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID -4.6 A Drain Current-Pulsed a IDM -18.4 A Maximum Power Dissipation PD 2.0 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 62.5 C/W Rev 2. 2010.May http //www.cetsemi.com 1 CEH2313 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Cond