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CET0215 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 150V, 2A, RDS(ON) = 440m @VGS = 10V. RDS(ON) = 580m @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead-free plating ; RoHS compliant. SOT-223 package. G D S D G SOT-223 S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 2 A Drain Current-Pulsed a IDM 8 A Maximum Power Dissipation PD 3 W Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Ambient b R JA 42 C/W Rev 2. 2011.Nov This is preliminary information on a new product in development now . Details are subject to change without notice . http //www.cetsemi.com