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ON Semiconductort Quad Amplifier/Switch MMPQ3904 Transistor ON Semiconductor Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc 16 Collector Base Voltage VCB 60 Vdc 1 Emitter Base Voltage VEB 6.0 Vdc CASE 751B 05, STYLE 4 Collector Current Continuous IC 200 mAdc SO 16 Four Each Transistors Transistor Equal Power Total Power Dissipation PD @ TA = 25 C 0.4 800 mW Derate above 25 C 3.2 6.4 mW/ C Total Power Dissipation PD Watts @ TC = 25 C 0.66 1.92 1 16 Derate above 25 C 5.3 15.4 mW/ C 2 15 3 14 Operating and Storage TJ, Tstg 55 to +150 C 4 13 Junction Temperature Range 5 12 6 11 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) 7 10 8 9 Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage(1) V(BR)CEO 40

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 mmpq3904-d.pdf Проектирование, MOSFET, Мощность

 mmpq3904-d.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmpq3904-d.pdf База данных, Инновации, ИМС, Транзисторы