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October 2007 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT - 523F Marking AA Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS 1.0M 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100 C 73 mA Pulsed 800 TJ Junction Temperature 150 C TSTG Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissi