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GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID @ 10V (Typ) TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test Application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Schematic Diagram Table 1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V 55 V VGS Gate-Source Voltage (VDS=0V) 20 V I Drain Current (DC) at Tc=25 110 A D (DC) I Drain Current (DC) at Tc=100 65 A D (DC) (Note 1) 368 A I Drain Current-Continuous@ Current-Pulsed DM (pluse) dv/dt Peak Diode Recovery Volta