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2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 2, 4 4 1 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 3 L Type 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 7V Collector current IC 3A Collector peak current IC (peak) 4A Collector power dissipation PC*1 10 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note 1. Value at TC = 25 C. Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V(BR)CBO 30 V IC = 0.1 mA, IE = 0 voltage Collector to emitter breakdown V(BR)CEO 30 V IC = 1 mA, RBE = _ voltage Emitter to base breakdown V(BR