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Spec. No. MOS200602 HI-SINCERITY Issued Date 2006.02.01 Revised Date 2006.02.07 MICROELECTRONICS CORP. Page No. 1/5 H03N60 Series Pin Assignment H03N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source 3 This high voltage MOSFET uses an advanced termination scheme to 2 1 provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to 3-Lead Plastic TO-220FP withstand high energy in avalanche and commutation modes. The new Package Code F energy efficient design also offers a drain-to-source diode with a fast Pin 1 Gate recovery time. Designed for high voltage, high speed switching Pin 2 Drain applications in power supplies, converters and PWM motor controls, Pin 3 Source these