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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB817C DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max.) @I = -5A CE(sat) C Good Linearity of h FE High Current Capability Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -140 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -12 A C I Collector Current-Pulse -20 A CP Collector Power Dissipation P 120 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor