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isc Silicon NPN Power Transistor 2SC2331 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Fast Switching Speed Complement to Type 2SA1008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 7.0 V EBO I Collector Current-Continuous 2.0 A C I Collector Current-Peak 4.0 A CM I Base Current-Continuous 1.0 A B Collector Power Dissipation@ T =25 1.5 a P W C Collector Power Dissipation@ T =25 15 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc websi