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isc Silicon NPN Power Transistor 2SC2335 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 3A, I = 0.6A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching in Inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters,DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7.0 V EBO I Collector Current-Continuous 7.0 A C I Collector Current-Peak 15 A CM I Base Current-Continuous 3.5 A B Total Power Dissipation P 40 W C @ T =25 C T