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isc Silicon NPN Power Transistor 2SC3746 DESCRIPTION Good Linearity of h FE High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters, converters Power amplifiers High-speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 5 A C I Collector Current-Pulse 7 A CM Collector Power Dissipation 20 @T =25 C P W C Collector Power Dissipation 2.0 @T =25 a T Junction Temperature 150 J T Storage Temperature -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silico