Скачать даташит для 2sc3969:

isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 2 A C I Collector Current-Peak 4 A CM Collector Power Dissipation 20 @ T =25 C P W C Collector Power Dissipation 2 @ T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3969 ELECTRICAL