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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ (I = 5A, I = 0.3A) CE(sat) C B Complement to Type 2SA1643 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 35 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 7 A C Collector Power Dissipation P 25 W C @T =25 C T Junction Temperature 150 J Storage Temperature -55 150 T stg 1 isc Website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power T