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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4507 DESCRIPTION Fast switching speed Silicon NPN planar diffused planar transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio temperature compensation and general purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 5 A C I Base Current-Continuous 1 A B Collector Power Dissipation P 40 W C @T =25 C Junction Temperature 150 T J T Storage Temperature -55 150 stg isc website www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4507 ELECTRICAL CHARACTERISTICS Tj=25 unless ot