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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 10 A C I Collector Current- Peak 20 A CM I Base Current 5 A B Collector Power Dissipation P 50 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc Website www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semic